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2SB1261 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

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2SB1261 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

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Brand Name :NEC
Model Number :2SB1261
Place of Origin :CHINA
MOQ :10 PCS
Price :Negotiation
Payment Terms :T/T, Western Union , ESCROW
Supply Ability :10000PCS
Delivery Time :STOCK
Packaging Details :BAG
Collector-Base Voltage :-60V
Collector-Emitter Voltage :-60V
Emitter-Base Voltage :-7V
Collector Current-Continuous :-3A
Collector Power Dissipation @TC=25℃ :10W
Junction Temperature :150℃
Storage Temperature :-55~150℃
PACKAGE :TO126
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2SB1261 General Purpose Rectifier Diode PNP Silicon Epitaxial Transistors
DESCRIPTION
·Low Collector Saturation Voltage
·High Power Dissipation- : PC= 10W(Max)@TC=25℃
·Complement to Type 2SD1899-K


APPLICATIONS
·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.
2SB1261 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
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