IRF540NSTRLPBF HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality
Parameters in details:
Advanced HEXFET Power MOSFETs from
Packaging: the TO - 263
Type: N channel
Continuous drain current (ID) at 25°C: 33A
Drain-source voltage (VDSS) : 100V
Gate source threshold voltage: 4V @ 250uA
Leakage source on resistance: 44 MQ2@16A,10V
Maximum power dissipation: 130W
Feature
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on resistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance
and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low profile applications.
Deli electronics tehcnology Co.,Ltd
Email:sales3@deli-ic.com
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